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    RS18N50F
    High Voltage MOS Power Transistor

    The RS18N50F is an N-channel enhancement mode power MOS field effect transistor which is produced using Reasunos proprietary HV_MOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. This devices are widely used in SMPS,Adapter and LED Drive.


    Main Features
      • VDS =500V,ID =18A

      • RDS(ON) <0.34Ω@ VGS = 10V

      • High Pulse Avalanche Engergy

      • Low Drain-to-Source On-Resistance

      • High UIS and UIS 100% Test


    Technical Documentation
    Device Type size Thumbnail Download specification document
    RS18N50F PDF 2,000 2022.03.06 RS18N50F TO-220F SPEC_EN A3
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    Email:oversea@reasunos.com Mobile:+8618825898464

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